Ch-technology SD800C..L Series Instrukcja Użytkownika Strona 4

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Document Number: 93553 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 14-May-08 3
SD800C..L Series
Standard Recovery Diodes
(Hockey PUK Version),
1200 A
Vishay High Power Products
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
Fig. 6 - Current Ratings Characteristics
30
40
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 700 800 900
30°
60°
90°
120°
180°
Avera ge Forward Curren t (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD800C..L Series (2400V to 3600V)
(Single Side Cooled)
R (DC) = 0.073 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000 1200 1400
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Maxim um Allowable Heatsink Tem perature (°C)
Conduction Period
SD 800C ..L Series (2400V to 3600V)
( S in g le Sid e C o o le d )
R (D C ) = 0 . 0 7 3 K/ W
th J-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 400 800 1200 1600
30°
60°
90°
120°
180°
Avera ge Forwa rd Cur ren t (A)
Maximum Allowable Heatsink Temperature C)
Conduction Angle
SD800C..L Series (2400V to 3600V )
(Double Side Cooled)
R (D C) = 0.031 K/W
th J-hs
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 400 800 1200 1600
30°
60°
90°
120°
180°
Avera ge Forwa rd Cur ren t (A)
Maximum Allowable Heatsink Temperature C)
Conduction Angle
SD800C..L Series (2400V to 3600V )
(Double Side Cooled)
R (D C) = 0.031 K/W
th J-hs
30
40
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 700 800
30°
60°
90°
120°
18
Averag e Forw ard Current (A)
Maximum Allowable Heatsink Temperature ( °C)
Conduction Angle
(Single Side C ooled )
R (D C ) = 0.073 K/W
thJ-h s
SD800C..L Series (4000V to 4500V )
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 2 00 400 600 80 0 100 0 1200
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
M axim um Allow able He atsin k Tem perature (°C )
Conduction Period
( S in g le Sid e C o o le d )
R (D C ) = 0.073 K/W
thJ-h s
SD 800C ..L Se rie s (4 000V to 4500V )
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