Ch-technology SD1100C..L Series Instrukcja Użytkownika Strona 4

  • Pobierz
  • Dodaj do moich podręczników
  • Drukuj
  • Strona
    / 9
  • Spis treści
  • BOOKMARKI
  • Oceniono. / 5. Na podstawie oceny klientów
Przeglądanie stron 3
Document Number: 93536 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 14-May-08 3
SD1100C..L Series
Standard Recovery Diodes
(Hockey PUK Version), 1170 A
Vishay High Power Products
Note
The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
SD1100C..L
UNITS
04 to 20 25 to 32
Maximum junction operating
temperature range
T
J
- 40 to 180 - 40 to 150
°C
Maximum storage temperature range T
Stg
- 55 to 200
Maximum thermal resistance,
junction to heatsink
R
thJ-hs
DC operation single side cooled 0.11
K/W
DC operation double side cooled 0.05
Mounting force, ± 10 %
9800
(1000)
N
(kg)
Approximate weight 250 g
Case style See dimensions - link at the end of datasheet DO-200AB (B-PUK)
ΔR
thJ-hs
CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.011 0.011 0.008 0.008
T
J
= T
J
maximum K/W
120° 0.014 0.015 0.014 0.014
90° 0.018 0.018 0.019 0.019
60° 0.026 0.026 0.027 0.028
30° 0.045 0.046 0.046 0.046
Przeglądanie stron 3
1 2 3 4 5 6 7 8 9

Komentarze do niniejszej Instrukcji

Brak uwag