Ch-technology PM50B4L1C060 Instrukcja Użytkownika Pobierz pdf (Strona 5)

PM50B4L1C060

Photo Voltaic IPM

H-Bridge

50 Amperes/600 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com

03/11 Rev. 0

Thermal Characteristics, T

= 25°C unless otherwise specied

Characteristic Symbol Condition Min. Typ. Max. Units

Junction to Case Thermal Resistance R

th(j-c)Q

Inverter IGBT (Per 1 Element)*

— — 0.74 °C/Watt

th(j-c)D

Inverter FWDi (Per 1 Element)*

— — 1.28 °C/Watt

Contact Thermal Resistance R

th(c-f)

Case to Fin (Per 1 Element)*

, — 0.060 — °C/Watt

Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units

Inverter Supply Voltage V

Applied across P-N Terminals ≤450 Volts

Control Supply Voltage*

Applied between V

UP1

-V

UPC

, 15.0 ± 1.5 Volts

VP1

-V

VPC

, V

-V

Input ON Voltage V

CIN(on)

Applied between U

-V

UPC

, ≤0.8 Volts

Input OFF Voltage V

CIN(off)

-V

VPC

, U

- V

- W

-Br-V

≥9.0 Volts

PWM Input Frequency f

PWM

Using Application Circuit Input Signal of IPM, ≤20 kHz

3-Phase Sinusoidal PWM VVVF Inverter

Arm Shoot-through Blocking Time t

DEAD

For IPMs Each Input Signals ≥2.0 µs

*1 When using this value, R

th(s-a)

should be measured just under the chips.

*3 With ripple satisfying the following conditions: dv/dt swing ≤5V/µs ; variation ≤2V peak-to-peak.

1 2 3 4 5

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